Method for making a metal oxide semiconductor device

Details Method for making a metal oxide semiconductor device Method for making a metal oxide semiconductor device

2005-11-10

2008-05-13

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Forming schottky junction

Using refractory group metal

C438S656000, C257SE21047

Reexamination Certificate

active

07371668

ABSTRACT:
A method for making a MOS device includes: forming an insulator layer on a semiconductor substrate, the insulator layer including a titanium dioxide film that has a surface with hydroxyl groups formed thereon; and forming an aluminum cap film on the surface of the titanium dioxide film, and conducting annealing operation of the aluminum cap film at an annealing temperature sufficient to permit formation of active hydrogen atoms through reaction of the aluminum cap film and the hydroxyl groups, thereby enabling hydrogen passivation of oxide traps in the titanium dioxide film through diffusion of the active hydrogen atoms into the titanium dioxide film.

REFERENCES:
patent: 6660660 (2003-12-01), Haukka et al.
patent: 6794315 (2004-09-01), Klemperer et al.
patent: 2003/0188777 (2003-10-01), Gaudiana et al.
patent: 2003/0192585 (2003-10-01), Beckenbaugh et al.
patent: 2004/0043557 (2004-03-01), Haukka et al.
patent: 2004/0129978 (2004-07-01), Hirai

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