Method for making a memory device with plural substrates...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S201000, C365S203000

Reexamination Certificate

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06879522

ABSTRACT:
A method for making a memory device includes forming or fabricating on a first substrate a first array of memory cells, a first read only memory, and a first write state machine which receives instructions from the first read only memory for operating the first array of memory cells. The method further includes forming or fabricating on a second substrate, a second array of memory cells, a second read only memory, and a second write state machine which receives instructions from the second read only memory for operating the second array of memory cells.

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