Method for making a mask useful in X-ray lithography

Details Method for making a mask useful in X-ray lithography Method for making a mask useful in X-ray lithography

1979-06-26

1981-10-06

Smith, John D.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

250514, 427 96, 427108, 427160, 430314, 430321, 430966, H05G 100, G21F 112

Patent

active

042936241

ABSTRACT:
In order to make a mask for use in lithography a layer of reflective material is first deposited on a substrate which is transparent to the radiation with which the mask is to be used; a layer of photoresist then deposited; the photoresist exposed with the desired pattern by UV radiation; the photoresist developed to expose the reflective material in the areas where it is desired to deposit an absorber material; the reflective material etched away from these areas undercutting the resist; the absorber deposited through the openings in the resist and reflective layer and the resist then lifted off.

REFERENCES:
patent: 3767398 (1973-10-01), Morgan
patent: 4018938 (1977-04-01), Feder et al.
patent: 4022927 (1977-05-01), Pfeiffer et al.
patent: 4035522 (1977-07-01), Hatzakis
patent: 4037111 (1977-07-01), Coquin et al.
patent: 4174219 (1979-11-01), Andres et al.

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