Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1978-01-12
1979-04-03
Lazarus, Richard B.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
29463, H01P 1100
Patent
active
041469496
ABSTRACT:
A magnetron anode is constructed of performed blanks which are bent in two portions of which one portion is a vane and a second portion is a segment of a cylindrical surface of the anode. Alternate blanks are provided with an alternate arrangement of supports for strapping rings of the magnetron anode. The assembly of cylindrical segments is enclosed within a sleeve to which the segments are brazed to provide an air tight wall of the magnetron anode.
REFERENCES:
patent: 2948061 (1960-08-01), Carstens
patent: 3608167 (1971-09-01), Safran et al.
patent: 3678575 (1972-07-01), Akeyama et al.
patent: 3792306 (1974-02-01), Smith et al.
patent: 4041350 (1977-08-01), Shitara et al.
Bartlett Milton D.
Lazarus Richard B.
McQuare John
Pannone Joseph D.
Raytheon Company
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