Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Dopant introduction into semiconductor region
Reexamination Certificate
2011-01-04
2011-01-04
Ngo, Ngan (Department: 2893)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Dopant introduction into semiconductor region
C438S022000, C438S016000, C438S029000, C438S046000, C257SE33054, C257SE33061
Reexamination Certificate
active
07863068
ABSTRACT:
A light emitting diode (LED) includes a p-n junction containing luminescent activator ions. The visible emission from the activator ions preferably complementing the band edge emission of the LED in order to produce an overall white emission from the LED. In a preferred embodiment, the LED has double heterojunction structure having a semiconductor active layer between two confinement layers. The semiconductor active layer includes activator ions preferably selected from among Eu3+, Tb3+, Dy3+, Pr3+, Tm3+, and Mn2+. The electron-hole pairs trapped within the active layer sensitize the activator ions, causing the activator ions to emit light.
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Clark Robert F.
Liu Benjamin Tzu-Hung
Ngo Ngan
Osram Sylvania Inc.
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