Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1979-10-12
1981-04-28
Dean, R.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576W, 29578, 29580, 148175, 156643, 156644, 156648, 156657, 156662, 357 35, 357 44, 357 50, H01L 2122, H01L 21467, H01L 2176
Patent
active
042643821
ABSTRACT:
A method for making lateral PNP or NPN devices in isolated monocrystalline silicon pockets wherein silicon dioxide isolation surrounds the pocket and partially, below the surface, within the isolated monocrystalline region. The P emitter or N emitter diffusion is made over the portion of the silicon dioxide that partially extends into the monocrystalline isolated pocket. This structure reduces the vertical current injection which will give relatively high (beta) gain even at low base to emitter voltages. The lateral PNP or NPN device resulting from the method is in a monocrystalline silicon pocket wherein silicon dioxide isolation surrounds the pocket and partially, below the surface, within the isolated monocrystalline silicon region. The P emitter or N emitter diffusion is located over the portion of the silicon dioxide that partially extends into the monocrystalline isolated pocket.
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Anantha Narasipur G.
Bhatia Harsaran S.
Caur Santosh P.
Pogge Hans B.
Dean R.
International Business Machines - Corporation
Saba W. G.
Saile George O.
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