Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1980-04-18
1982-02-23
Dean, R.
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 29576B, 29578, 148 15, 148175, 148187, 357 51, H01L 2122, H01L 21265
Patent
active
043163190
ABSTRACT:
A high sheet resistance structure for high density integrated circuits and the method for manufacturing such structure is given. The structure includes a silicon region separated from other silicon regions by a dielectric barrier surrounding the region. A resistor of a first conductivity, for example, N type, encompasses substantially the surface of the silicon region. Electrical contacts are made to the resistor. A region highly doped of a second conductivity, for example, P-type, is located below a portion of the resistor region. This region of second conductivity is connected to the surface. Electrical contacts are made to this varied region for biasing purposes. A second region within the same isolated silicon region may be used as a resistor. This region is located below the buried region of second conductivity. Alternatively, the described resistor regions can be connected as transistors. This allows the formation of a standard masterslice which can be personalized at a late stage in the manufacturing to either resistors or transistors in all or a portion of the standard regions.
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Anantha Narasipur G.
Chang Augustine W.
Dean R.
International Business Machines - Corporation
Saba W. G.
Saile George O.
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