Method for making a heterostructure semiconductor laser device b

Details Method for making a heterostructure semiconductor laser device b Method for making a heterostructure semiconductor laser device b

1987-09-02

1988-07-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 51, 437107, 437133, 437226, 437905, 148DIG65, 148DIG50, 148DIG95, 372103, 156645, 156652, 156655, 357 17, 357 55, H01L 21306, H01L 21203

Patent

active

047585323

ABSTRACT:
A semiconductor laser device comprises a substrate (7) formed of p type GaAs, a laser diode portion (10) capable of laser oscillation and a monitor photodiode portion (11) capable of photoelectric conversion formed on substrate (7). The laser diode portion (10) and the monitor photodiode portion (11) are both formed of an epitaxial separating layer (6) of p type AlAs, an epitaxial layer group (23) mainly formed of a material of AlGaAs system and an epitaxial window layer (9) formed on a cleavage plane of this epitaxial layer group (23). The cleavage plane of the epitaxial window layer (9) on the side of the laser diode portion (10) constitutes a laser resonator plane (16) for laser light output of said laser diode portion (10) while the cleavage plane of the epitaxial window layer (9) on the monitor photodiode portion (11) constitutes a light receiving plane (17) for receiving the laser light outputted from the laser resonator plane (16).

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