Method for making a GaN electroluminescent semiconductor device

Details Method for making a GaN electroluminescent semiconductor device Method for making a GaN electroluminescent semiconductor device

1983-04-12

1984-10-02

Saba, William G.

Metal working

Plural diverse manufacturing apparatus including means for...

Common reciprocating support for spaced tools

29576E, 148175, 156612, 156614, 156DIG70, 156DIG99, 357 17, 357 61, H01L 2120, H01L 21285

Patent

active

044739389

ABSTRACT:
An electroluminescent semiconductor device comprising bodies of conductive and resistive crystalline gallium nitride (GaN) which are successively epitaxially deposited on a surface of a heat-treated sapphire substrate, and a body of insulative crystalline gallium nitride epitaxially deposited on the resistive body.

REFERENCES:
patent: 3683240 (1972-08-01), Pankove
patent: 3819974 (1974-06-01), Stevenson et al.
patent: 3922703 (1975-11-01), Pankove
patent: 4144116 (1979-03-01), Jacob et al.
patent: 4268842 (1981-05-01), Jacob et al.
Maruska et al., "Prep. of Mg-Doped GaN Diodes . . . ", Mat. Res. Bull., vol. 7, No. 8, pp. 777-782 (1972).

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