Method for making a fuse structure for improved repaired yields

Details Method for making a fuse structure for improved repaired yields Method for making a fuse structure for improved repaired yields

1998-02-17

2000-09-19

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

438601, 438648, 438662, 438685, H01L 2182, H01L 2710

Patent

active

061210730

ABSTRACT:
This invention relates to a novel fuse structure and method for deleting redundant circuit elements on integrated circuits. This fuse structure is useful for increasing the repair yield on RAM chips by deleting defective rows of memory cells. The method involves forming a fuse area in a patterned electrically conducting layer also used to form interconnections. A relatively thin (0.4 um) insulating layer is deposited having a uniform thickness across the substrate. The next level of patterned interconnections is formed with a portion of the layer aligned over the fuse area to serve as an etch-stop layer. For example, the conducting layers can be the first and second polysilicon layers on a RAM chip. The remaining multilevel of interconnections is then formed having a number of relatively thick interlevel dielectric (ILD) layers interposed which can have an accumulative large variation in thickness across the substrate. Fuse windows (openings) are then selectively etched in the ILD layers to the etch-stop layer and the etch-stop layer is selectively etched in the fuse window to the insulating layer over the fuse area. This process allows fuse structures to be built without overetching that can cause fuse damage. The uniform thick insulating layer allows repeatable and reliable laser abrading (evaporation) to open the desired fuses.

REFERENCES:
patent: 5232874 (1993-08-01), Rhodes et al.
patent: 5258096 (1993-11-01), Sandhu et al.
patent: 5457059 (1995-10-01), Keller et al.
patent: 5721543 (1998-02-01), Imai et al.
patent: 5821160 (1998-10-01), Rodriguez et al.
patent: 5891762 (1999-04-01), Sakai et al.
patent: 5965927 (1999-10-01), Lee et al.
patent: 5970346 (1999-10-01), Liaw

Affiliated with

Also associated with

Rating

Method for making a fuse structure for improved repaired yields does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a fuse structure for improved repaired yields , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a fuse structure for improved repaired yields will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1071945