Method for making a fluorinated silicon dioxide layer on silicon

Details Method for making a fluorinated silicon dioxide layer on silicon Method for making a fluorinated silicon dioxide layer on silicon

1996-05-01

1997-04-01

Phasge, Arun S.

Electrolysis: processes, compositions used therein, and methods

Electrolytic coating

Coating predominantly semiconductor substrate

205316, 205333, C25D 712, C25D 1132

Patent

active

056162332

ABSTRACT:
A method for forming a fluorinated silicon dioxide layer on a silicon substrate is brought about by anodic oxidation at room temperature. The fluorinated silicon dioxide layer may serve as a field oxide layer or the oxide layer of a thin film transistor. The method involves an electrolytic reaction making use of the silicon substrate as an anode and an electrolyte made of a hydrosilicofluoric acid aqueous solution containing the hydrosilicofluoric acid and the water in a volumetric ratio of about 1:1000. The electrolytic reaction is brought about by a current density of about 1 mA/cm.sup.2. The oxide layer is formed on the anode at a rate of 1 .mu.m/hr and is proved to contain a Si-F bond by the FTIR analysis.

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