Method for making a fine annular charge storage electrode in a s

Details Method for making a fine annular charge storage electrode in a s Method for making a fine annular charge storage electrode in a s

1995-07-07

1996-12-10

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 60, 437919, 437962, 148DIG106, H01L 2170, H01L 2700

Patent

active

055830692

ABSTRACT:
The present invention provides a method for making a fine annular charge storage electrode in a semiconductor device, which is capable of easily forming the charge storage electrode having a double cylinder-shaped structure and a fine annular pattern which is smaller than the wavelength from the light source, using a phase-shift mask. Accordingly, the present invention has an effect in that the reliability of a memory device having the charge storage electrode is improved, by removing the bad contact in the double cylinder-shaped structure, and that the surface of the charge storage electrode can be easily increased from 20% to 80%.

REFERENCES:
patent: 5380673 (1995-01-01), Yang et al.
patent: 5413950 (1995-05-01), Chen et al.
patent: 5447881 (1995-09-01), Ryou
patent: 5451539 (1995-09-01), Ryou

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