Method for making a field-emission type electron gun

Details Method for making a field-emission type electron gun Method for making a field-emission type electron gun

1995-10-26

1997-04-15

Bradley, P. Austin

Electric lamp or space discharge component or device manufacturi

Process

Electrode making

313309, 313336, H01J 130, H01J 902

Patent

active

056203500

ABSTRACT:
A method for making a field-emission type electron gun has the steps of: a) forming insulating film on a main plane of a silicon substrate; b) selectively etching the insulating film within a region where a gate electrode will be formed to form a mask of the insulating film; c) removing the silicon substrate within the region with using the mask to form a concave portion, wherein the insulating film leaves on an edge of the concave portion and an edge of the insulating film extends in the form of a cantilever from the edge of the concave portion; d) oxidizing a surface of the silicon substrate by thermal oxidation to form an emitter with a sharpened tip; e) depositing film for forming a gate electrode to fill the concave portion; f) removing an unnecessary part of the film for forming the gate electrode; and g) selectively removing the oxidized surface of the silicon substrate on the emitter to expose the tip of the emitter.

REFERENCES:
patent: 3921022 (1975-11-01), Levine
patent: 4008412 (1977-02-01), Yuito et al.
patent: 5199917 (1993-04-01), MacDonald et al.
C.A. Spindt et al., "Physical properties of thin-film field emission cathodes with molybdenum cones", Journal of Applied Physics, vol. 47, No. 12, Dec. 1976, pp. 5248-5265.

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