Method for making a ferroelectric semiconductor device and a lay

Details Method for making a ferroelectric semiconductor device and a lay Method for making a ferroelectric semiconductor device and a lay

1997-09-29

1999-03-30

Utech, Benjamin

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117103, 117104, 117953, C30B 2300

Patent

active

058882960

ABSTRACT:
A layered bismuth ferroelectric structure (12) and a method for forming the bismuth layered ferroelectric structure (12). A monolayer (12A) of bismuth is formed in intimate contact with a single crystalline semiconductor material (11). A layered ferroelectric material (12) is grown on the monolayer (12A) of bismuth such that the monolayer (12A) of bismuth becomes a part of the layered ferroelectric material (12). The ferroelectric material (12) forms a layered ferroelectric material which is not a pure perovskite, wherein the crystalline structure at the interface between the single crystalline semiconductor material (11) and the monolayer (12A) of bismuth are substantially the same.

REFERENCES:
patent: 2791760 (1957-05-01), Ross
patent: 4568397 (1986-02-01), Hoke et al.
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 5070026 (1991-12-01), Greenwald et al.
patent: 5120394 (1992-06-01), Mukai
patent: 5146299 (1992-09-01), Lampe et al.
patent: 5225031 (1993-07-01), McKee et al.
patent: 5423285 (1995-06-01), Paz de Araujo et al.
patent: 5426075 (1995-06-01), Perino et al.
patent: 5434102 (1995-07-01), Watanabe et al.
patent: 5439845 (1995-08-01), Watanabe et al.
patent: 5450812 (1995-09-01), McKee et al.
patent: 5468679 (1995-11-01), Paz de Araujo et al.
patent: 5468684 (1995-11-01), Yoshimori et al.
patent: 5471363 (1995-11-01), Mihara
patent: 5481490 (1996-01-01), Watanabe et al.
patent: 5482003 (1996-01-01), McKee et al.
patent: 5519234 (1996-05-01), Paz de Araujo et al.
patent: 5579258 (1996-11-01), Adachi
"Piezoelectric Ceramics" Bernard Jaffe, William Cook, Jr. and Hans Jaffe, Academic Press, London and New York, 1971, pp. 213-235.
"Crystal Structure of Bi.sub.4 Ti.sub.3 O.sub.12 ", J. F. Dorrian, R. E. Newnham, D. K. Smith and M. I. Kay, Ferroelectronics, Gordon and Breach Science Publishers Ltd., Norwich, England, 1971, vol. 3, pp. 17-27.

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