Method for making a ferroelectric memory cell with a ferroelectr

Details Method for making a ferroelectric memory cell with a ferroelectr Method for making a ferroelectric memory cell with a ferroelectr

1995-09-11

1996-12-03

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

055808140

ABSTRACT:
A ferroelectric memory cell has an FET covered by an insulation layer and a ferroelectric capacitor located thereover. An interconnect couples an upper plate of the ferroelectric capacitor to a source/drain of the transistor. In a method of forming the cells, after the transistor is fabricated, the bottom electrode and ferroelectric dielectric are established, but the top capacitor electrode is not added until a further layer of insulation is added over the ferroelectric and windows are opened in it. One window is for the top electrode and another window is to one source/drain region of the FET.

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