Metal working – Electric condenser making – Solid dielectric type
Patent
1996-01-16
1997-12-02
Ledynh, Bot L.
Metal working
Electric condenser making
Solid dielectric type
437 51, 437 60, 437228, 437919, 3613214, H01G 700, H01L 21465
Patent
active
056922817
ABSTRACT:
A dual trench structure for a high density trench DRAM. The dual trench structure, each of which can reside in part under the access device of a respective cell, does not require the use of expensive selective epi growth techniques. A sub-minimum lithographic trench opening can be used (1) to improve the cell area, (2) to increase the device length, and (3) to improve the margin of diffusion straps. Acceptable trench capacitance for the cells formed in a single opening can be achieved either by using thin capacitor dielectric, or by expanding the trenches laterally under the devices.
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patent: 5449630 (1995-09-01), Lur et al.
N.C.C. Lu et al IEDM 1988 IEEE pp. 588-591 "A Buried Trench DRAM Cell Using a Self-Aligned Epitaxy Over Trench Technology".
L. Nesbit et al IEDM 1993 IEEE pp. 627-630 "A 0.6 .mu.m.sup.2 256 Mb Trench DRAM Cell with Self-Aligned BuriEd STrap (BEST)".
International Business Machines - Corporation
Ledynh Bot L.
Tassinari, Jr. Robert P.
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