Method for making a diffraction lattice on a semiconductor mater

Details Method for making a diffraction lattice on a semiconductor mater Method for making a diffraction lattice on a semiconductor mater

1988-12-15

1991-07-23

Arnold, Bruce Y.

35016217, 350320, C02B 518, C25F 312

Patent

active

050338161

ABSTRACT:
The method consists of the following successive steps: the deposition on a substrate, by epitaxy, of an optical confinement layer, formed by a first semiconducting material; the deposition, by epitaxy of an active layer, formed by a second semiconducting material; the deposition, by epitaxy, of a stop layer, formed by a third semiconducting material, with a thickness of between 0.005 and 0.02 microns; the deposition, by epitaxy, of a guide layer, formed by a fourth semiconducting material, with a thickness of between 0.01 and 0.03 microns; the deposition of a layer of photosensitive resin, and the cutting out of this layer in a shape to be given to the diffraction lattice which is to be made; the attacking of the guide layer by means of a selective, chemical agent which attacks neither the material of the stop layer nor the resin, this chemical agent being allowed to act until the entire thickness of the guide layer has been gone through, said thickness being chosen to be equal to the depth required for the diffraction lattice.

REFERENCES:
patent: 4401367 (1983-08-01), Grantham et al.
patent: 4403827 (1983-09-01), Bryan et al.
patent: 4656636 (1987-04-01), Amann et al.
Patent Abstracts of Japan, vol. 10, No. 329 (E-452) [2385], Nov. 8, 1986.
Patent Abstracts of Japan, vol. 2, No. 22 (E-13), Feb. 14, 1978, p. 11453 E 77.
Patent Abstracts of Japan, vol. 9, No. 291 (E-359) [2014], Nov. 19, 1985.
Patent Abstracts of Japan, vol. 9, No. 47 (E-299) [1770], Feb. 27, 1985.

Affiliated with

Also associated with

Rating

Method for making a diffraction lattice on a semiconductor mater does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a diffraction lattice on a semiconductor mater, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a diffraction lattice on a semiconductor mater will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-428576