Method for making a contact hole of a semiconductor device

Details Method for making a contact hole of a semiconductor device Method for making a contact hole of a semiconductor device

1993-10-22

1995-08-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437193, 437228, 437235, 148DIG20, H01L 2144, H01L 2148

Patent

active

054440211

ABSTRACT:
A method for making a contact hole during manufacture of a semiconductor device. The method whereby, in a state that there is formed an arrangement which consists of one or more conductive materials insulated with a first insulating film on a contact region, a contact hole is so formed on the contact region as not to electrically connect with the arrangement, comprising the steps of: applying an etching process to the first insulating film to expose a part of the conductive material by means of a photosensitive pattern, said first insulating film remaining in part; removing the exposed part of the conductive material by means of etching; forming a second insulating film to a predetermined thickness over the resulting structure taking into consideration of the size of the contact hole desired; applying an anisotropic etching process to the second insulating film to form a spacer insulating film; and etching the remaining first insulating film along the spacer insulating film so as to form the contact hole on the contact region. The method results in improved device reliability and improved production yield.

REFERENCES:
patent: 4696098 (1987-09-01), Yen
patent: 4808552 (1989-02-01), Anderson
patent: 5100838 (1992-03-01), Dennison
patent: 5262352 (1993-11-01), Woo et al.
patent: 5318925 (1994-06-01), Kim

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