Method for making a conductive silicon substrate by heat treatme

Details Method for making a conductive silicon substrate by heat treatme Method for making a conductive silicon substrate by heat treatme

1983-12-19

1985-03-19

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148187, 357 91, H01L 21225, H01L 754

Patent

active

045057591

ABSTRACT:
A method for the heat treatment of oxygenated and lightly doped silicon single crystals provides a conductive silicon substrate which draws off stray currents from adjacent n-channel and p-channel transistors, preventing latch-up in CMOS integrated circuits. A lightly doped oxygenated, single crystal silicon wafer is heated at 1000.degree. to 1150.degree. C. to out-diffuse oxygen from the surface layer. After device fabrication on this denuded surface, the wafer is heated at 450.degree. C. to generate oxygen donors in the bulk of the wafer which then becomes strongly conductive or n-type. The wafer surface will remain lightly doped, either n-- or p-type from the original doping. By suitable masking during the oxygen out-diffusion step, islands of lightly doped p-- or n-type material on the surface may be surrounded by guard rings of strongly conducting n-type material formed in the final heating step at 450.degree. C.

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A. Murgai, et al., "Microdistribution of Oxygen in Silicon," Massachusetts Institute of Technology, Solid-State Science and Technology, May 1980, pp. 1182-1186.
Fuller & Logan, "Effect of Heat Treatment Upon the Electrical Properties of Silicon Crystals," Bell Telephone Laboratories, Inc., Journal of Applied Physics, vol. 28, No. 12, Dec. 1957, pp. 1427-1436.

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