Method for making a complementary device containing MODFET

Details Method for making a complementary device containing MODFET Method for making a complementary device containing MODFET

1987-04-07

1988-12-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

357 42, 357 58, H01L 2710

Patent

active

047910720

ABSTRACT:
Complementary structure implemented in Group III-V compound semiconductors is obtained by using an n-channel field effect transistor and a p-channel MODFET.

REFERENCES:
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4424525 (1984-01-01), Mimura
patent: 4450462 (1984-05-01), Nuyen
patent: 4471367 (1984-09-01), Chen et al.
patent: 4538165 (1985-08-01), Chang et al.
patent: 4688061 (1987-08-01), Sakaki

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