Method for making a complementary bipolar transistor

Details Method for making a complementary bipolar transistor Method for making a complementary bipolar transistor

1995-08-29

1997-05-13

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Complementary bipolar transistors

438368, H01L 21265

Patent

active

056292198

ABSTRACT:
A hole in the site for the emitter layer of the npn transistor of a complementary bipolar transistor is made in a step independent from a step of making a hole in the site for the emitter layer of the pnp transistor, and an n.sup.+ -type polycrystalline Si film doped with an n-type impurity upon being made is used to make the emitter electrode of the npn transistor. Independently from this step, a p.sup.+ -type polycrystalline Si film doped with a p-type impurity upon being made is used to make the emitter electrode of the pnp transistor. The n-type impurity diffusing from the emitter electrode makes an n.sup.+ -type emitter layer of the npn transistor, whereas the p-type impurity diffusing from the emitter electrode makes a p.sup.+ -type emitter layer of the pnp transistor. Thus the method can produce complementary bipolar transistors with a higher performance, and is suitable for combination with a process for fabricating sub-half-micron bipolar CMOSs.

REFERENCES:
patent: 5244835 (1993-09-01), Hachiya

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