Method for making a color image sensor with pad-to-pad...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S070000, C438S073000

Reexamination Certificate

active

06972210

ABSTRACT:
The invention relates to the making of color image sensors for miniature cameras. The method of fabrication includes the formation on the front face of a semi-conductive wafer of a series of active zones comprising image detection circuits, each corresponding to a respective image sensor. Each active zone is surrounded by input/output pads. The wafer is transferred by its front fact against the front face of a supporting substrate. The major part of the thickness of the semiconductor wafer is eliminated, leaving a very fine semi-conductive layer including the image detection circuits on the substrate. This method is characterized in that firstly, layers of color filters are deposited and then etched on the semi-conductive layer thus thinned. Secondly, the substrate includes connection pads laid out with the same geometry as the pads of each active zone so as to come into a position facing these pads during the transfer, to solder a respective pad of the substrate to a corresponding pad of the semi-conductive wafer. Finally, the substrate is diced into individual sensors after the deposition of the color filters.

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patent: 2002/0019069 (2002-02-01), Wada
patent: 1 094 511 (2001-04-01), None

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