Method for making a charge transfer semiconductor device having

Details Method for making a charge transfer semiconductor device having Method for making a charge transfer semiconductor device having

1991-05-08

1992-10-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 53, 437150, 437157, H01L 21339, H01L 21266

Patent

active

051569850

ABSTRACT:
In making trench type semiconductor CCD by using oblique ion-injections into an oblong trench groove in a semiconductor substrate region for injecting impurity atoms, an injection angle .alpha. for injecting a first conductivity type impurity to form isolation region into the side walls and also for injecting a second conductivity type impurity to form a charge transfer region thereon is selected less than .pi./4, and another injection angle .beta. for injecting the same impurity into the end wall to form the end part of the isolation region and a third injection angle .gamma. for injecting the second conductivity type impurity thereon into the end wall to form the end part of the charge transfer region are selected: ##EQU1##

REFERENCES:
patent: 4374455 (1983-02-01), Goodman
patent: 4580331 (1986-04-01), Soclof
patent: 5029321 (1991-07-01), Kimura

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