Fishing – trapping – and vermin destroying
Patent
1992-09-29
1993-12-21
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 32, 437100, 437105, 148DIG11, 148DIG148, H01L 21265
Patent
active
052720969
ABSTRACT:
A layer of silicon carbide (33, 38, 41) is utilized in forming a bipolar transistor (30, 40). The transistor (30, 40) is formed on a substrate (31, 32) that has a single crystal silicon surface. The layer of silicon carbide (33, 38, 41) is epitaxially formed on the single crystal silicon surface. Thereafter, a layer of silicon (34) is epitaxially formed on the layer of silicon carbide (33, 38, 41). The silicon carbide (33, 38, 41) functions as an active transistor layer or alternately is within the transistor's depletion region.
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de Fresart Edouard D.
Liaw Hang M.
Chaudhuri Olik
Hightower Robert F.
Motorola Inc.
Paladugu Ramamohan Rao
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