Method for making a base etched transistor integrated circuit

Details Method for making a base etched transistor integrated circuit Method for making a base etched transistor integrated circuit

1982-03-22

1984-03-13

Saba, W. G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29576W, 29578, 29580, 148175, 148187, 156643, 156653, 156657, 156626, 357 20, 357 34, 357 50, 357 55, H01L 21302, H01L 2122

Patent

active

044358989

ABSTRACT:
A process is described which permits the fabrication of very narrow base width bipolar transistors. The ability to selectively vary the transistor characteristics provides a degree of freedom for design of integrated circuits. The bipolar transistor is processed up to the point of emitter formation using conventional techniques. But, prior to the emitter formation, the base area which is to be the emitter is dry etched using reactive ion etching. The existing silicon nitride/silicon dioxide layers with the emitter opening therein are used as the etching mask for this reactive ion etching procedure. Once the etching is completed to the desired depth, the normal processing is resumed to form the emitter and rest of the metallization. Since the intrinsic base under the emitter is etched. and the normal emitter is formed afterwards, the etching reduces the base width by an amount approximately equal to the etched depth. The transistor characteristics depend strongly upon the base width so the etching is controlled to very tight dimensions.

REFERENCES:
patent: 3312881 (1967-04-01), Yu
patent: 3489622 (1970-01-01), Barson et al.
patent: 3551220 (1970-12-01), Meer et al.
patent: 3669760 (1972-06-01), Rein et al.
patent: 3677837 (1972-07-01), Ashar
patent: 3717515 (1973-02-01), Ashar et al.
patent: 3926695 (1975-12-01), U
patent: 3966577 (1976-06-01), Hochberg
patent: 4066473 (1978-01-01), O'Brien
patent: 4069096 (1978-01-01), Reinberg et al.
patent: 4104086 (1978-08-01), Bondur et al.
patent: 4135954 (1979-01-01), Chang et al.
patent: 4139442 (1979-02-01), Bondur et al.
patent: 4177094 (1979-12-01), Kroon
patent: 4289550 (1981-09-01), Feist
patent: 4367044 (1983-01-01), Booth et al.
IBM Technical Disclosure Bulletin, vol. 20, No. 4 Sep. 1977 "High-Performance Transistor Structure" by K. Malin, pp. 1495-1496.
Levi, R., "Reactive Ion Etch Technique . . . Reducing Series Resistance . . . " I.B.M. Tech. Discl. Bull., vol. 20, No. 8, Jan. 1978, pp. 3127-3128.

Affiliated with

Also associated with

Rating

Method for making a base etched transistor integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a base etched transistor integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a base etched transistor integrated circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-485859