Fishing – trapping – and vermin destroying
Patent
1991-11-26
1993-05-18
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437233, 437238, 437241, 437247, 148DIG3, 148DIG118, 148DIG122, H01L 2100, H01L 2102, H01L 21469
Patent
active
052121194
ABSTRACT:
A method for depositing a passivation layer on a semiconductor structure having a high resistance value polysilicon layer formed thereon while maintaining the high resistance value thereof and comprises sequentially depositing a silicon oxide layer and a silicon nitride layer, on a high resistance value polysilicon layer of a partially completed semiconductor structure to form a passivation layer thereover. The passivation layer including the silicon oxide layer and the silicon nitride layer is annealed with oxygen plasma in a chamber. The annealed passivation layer is then heated in the presence of a conditioning gas in the chamber to thereby maintaining the resistance of the high resistance value polysilicon layer.
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Baek Yong K.
Cheon Hee K.
Hah Hyung C.
Kim Jung T.
Everhart B.
Hearn Brian E.
Hyundai Electronics Industries Co,. Ltd.
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