Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-08-01
2000-02-22
Lusignan, Michael
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
216 88, 216 89, 438 5, 438 14, 438693, 451 36, 451 41, 451287, 451288, B24B 100
Patent
active
060280069
ABSTRACT:
A method for maintaining the buffer capacity of a polishing slurry during chemical-mechanical wafer polishing, the method comprising circulating the polishing slurry in a chemical-mechanical wafer polishing apparatus, monitoring the pH of the polishing slurry, combining an agent into the polishing slurry to adjust the pH of the polishing slurry and maintaining the pH of the polishing slurry within a predetermined range, thereby maintaining the buffer capacity of the polishing slurry.
REFERENCES:
patent: 5643406 (1997-07-01), Shimomura et al.
patent: 5662769 (1997-09-01), Schonauer et al.
Allen Franklin Louis
Bawa Mohendra S.
Etheridge Gary Lee
Grimes Michael H.
L'Anglois Kenneth John
Donaldson Richard L.
Lusignan Michael
Maginniss Christopher L.
Texas Instruments Incorporated
Valetti Mark A.
LandOfFree
Method for maintaining the buffer capacity of siliceous chemical does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for maintaining the buffer capacity of siliceous chemical, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for maintaining the buffer capacity of siliceous chemical will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-520261