Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1981-07-13
1982-11-16
Smith, John D.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 99, 4272552, 4271261, H01L 21285
Patent
active
043594905
ABSTRACT:
A low temperature LPCVD process for co-depositing metal and silicon to form metal silicide on a surface such as the surface of a semiconductor integrated circuit wherein the metal is selected from the group consisting of tungsten, molybdenum, tantalum and niobium. A reactor which contains the surface is maintained at a temperature of about 500.degree.-700.degree. C. The reactor is purged by the successive steps of introducing an inert gas into the reactor, introducing a reducing atmosphere into the reactor and introducing hydrogen chloride gas into the reactor. Silane is then introduced into the reactor such that a base layer of polysilicon is formed on the surface. Then, while maintaining silane introduction to the reactor, metal chloride vapor is simultaneously introduced into the reactor such that metal and silicon are co-deposited on the polysilicon as metal silicide.
REFERENCES:
patent: 3381182 (1968-04-01), Thornton
patent: 3540920 (1970-11-01), Wakefield
patent: 3881242 (1975-05-01), Nuttall
patent: 4180596 (1979-12-01), Crowder
patent: 4276557 (1981-06-01), Levinstein
Kern, "Advances in Deposition Processes for Passivation Films", J. Vac. Sci. Technol, vol. 14, No. 5, Sep./Oct. 1977, pp. 1082-1099.
Fairchild Camera & Instrument Corp.
Olsen Ken
Park Theodore Scott
Pollock Michael J.
Smith John D.
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