Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Patent
1993-06-24
1996-06-04
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
257 72, 257627, 257347, H01L 2904, H01L 31036
Patent
active
055235875
ABSTRACT:
In accordance with the invention, a thin layer of epitaxial silicon is grown at low temperatures at or below 300.degree. C. by the steps of providing a substrate, forming an oriented dielectric buffer layer on the substrate and growing epitaxial silicon on the buffer layer. Preferably the substrate has a glass surface and the oriented buffer layer is cubic ZrO.sub.2. The buffer layer is preferably oriented by bombarding it with a directed ion beam while the buffer layer is being deposited on the substrate. For example, a buffer layer of (100) cubic ZrO.sub.2 can be grown at a temperature as low as 300.degree. C. The oriented cubic ZrO.sub.2 is an excellent buffer for epitaxial silicon on glass due to a good match of lattice parameters with silicon and a good match of thermal expansion coefficients with glass. An oriented (100) silicon epitaxial film can then be grown on the epitaxial template provided by the buffer layer at a temperature as low as 250.degree. C. This low temperature process for producing epitaxial films offers multiple advantages: (1) reduced silicon interfacial defect densities and enlarged grain size permitting improved thin film transistor performance due to a lowered "off" current; (2) higher electron mobility permitting the fabrication of integrated displays; (3) lower temperature processing permitting the use of inexpensive glass substrates such as borosilicates; (4) sufficiently low temperature processing to permit the use of new lightweight substrates such as glass-coated polymeric materials (glass-coated plastics) which can substantially reduce the weight of displays and thus enhance the portability of portable computers, video telephones, and personal communicators; and (5) the use of new buffer layers such as ZrO.sub.2 which can block the diffusion of Na ions from the substrate.
REFERENCES:
patent: 5304357 (1994-04-01), Sato et al.
patent: 5306651 (1994-04-01), Masumo et al.
N. Sonnenberg, et al. "Preparation of biaxially aligned cubic zirconia films on pyrex glass substrates usinhg ion-beam assisted deposition" J. Appl. Phys., vol. 74, No. 2, pp. 1027-1034.
AT&T Corp.
Books Glen E.
Guay John
Jackson Jerome
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