Method for low temperature ashing in a plasma

Details Method for low temperature ashing in a plasma Method for low temperature ashing in a plasma

1982-06-16

1984-10-02

Caroff, Marc L.

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 38, 156643, B08B 700

Patent

active

044746210

ABSTRACT:
Ashing rates of encapsulants exposed to an oxygen plasma in a reactor are increased by simultaneously exposing a solid halogen-substituted hydrocarbon polymer to a plasma jet formed within a cavity in a grounded conductive surface of the reactor. Advantageously the solid reactant may be polyvinyl chloride or polytetrafluorethylene in solid form.

REFERENCES:
patent: 3615956 (1971-10-01), Irving et al.
patent: 4028155 (1977-06-01), Jacob
patent: 4138306 (1979-02-01), Niwa
patent: 4243476 (1981-01-01), Ahn et al.
patent: 4307178 (1981-12-01), Kaplan et al.
Desilets et al., "Reactive Species Generation for Plasma Etching by Ion Bombardment of a Suitable Compound", IBM TDB, vol. 22, No. 1, Jun. 1979, pp. 112-113.
Anderson et al., "Resist Residue and Oxide Removal Prior to Plating, Lift-Off and Etching", IBM TDB, vol. 21, No. 5, Oct. 1978, p. 2108.

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