Method for low temperature annealing of metallization...

Electrolysis: processes – compositions used therein – and methods – Electrolytic coating – Depositing predominantly single metal or alloy coating on...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C205S123000, C205S182000, C205S224000

Reexamination Certificate

active

07462269

ABSTRACT:
A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.

REFERENCES:
patent: 2443599 (1948-06-01), Chester
patent: 3715289 (1973-02-01), Cope, Jr.
patent: 3727620 (1973-04-01), Orr
patent: 3770598 (1973-11-01), Creutz
patent: 3894918 (1975-07-01), Corby et al.
patent: 4027686 (1977-06-01), Shortes et al.
patent: 4092176 (1978-05-01), Kozai et al.
patent: 4110176 (1978-08-01), Creutz et al.
patent: 4113492 (1978-09-01), Sato et al.
patent: 4250004 (1981-02-01), Miles et al.
patent: 4315059 (1982-02-01), Raistrick et al.
patent: 4336114 (1982-06-01), Mayer et al.
patent: 4376685 (1983-03-01), Watson
patent: 4385937 (1983-05-01), Ohmura et al.
patent: 4401521 (1983-08-01), Ohmura et al.
patent: 4405416 (1983-09-01), Raistrick et al.
patent: 4428815 (1984-01-01), Powell et al.
patent: 4435266 (1984-03-01), Johnston
patent: 4489740 (1984-12-01), Rattan et al.
patent: 4510176 (1985-04-01), Cuthbert et al.
patent: 4518678 (1985-05-01), Allen
patent: 4519846 (1985-05-01), Aigo
patent: 4528519 (1985-07-01), van Driest
patent: 4539222 (1985-09-01), Anderson, Jr. et al.
patent: 4687552 (1987-08-01), Early et al.
patent: 4693805 (1987-09-01), Quazi
patent: 4732785 (1988-03-01), Brewer
patent: 4781801 (1988-11-01), Frisby
patent: 4891069 (1990-01-01), Holtzman et al.
patent: 5039381 (1991-08-01), Mullarkey
patent: 5055425 (1991-10-01), Leibovitz et al.
patent: 5084412 (1992-01-01), Nakasaki
patent: 5091339 (1992-02-01), Carey
patent: 5145571 (1992-09-01), Lane
patent: 5151168 (1992-09-01), Gilton et al.
patent: 5155336 (1992-10-01), Gronet et al.
patent: 5160600 (1992-11-01), Patel
patent: 5162260 (1992-11-01), Leibovitz et al.
patent: 5162263 (1992-11-01), Kunishima et al.
patent: 5164332 (1992-11-01), Kumar
patent: 5222310 (1993-06-01), Thompson et al.
patent: 5224504 (1993-07-01), Thompson et al.
patent: 5230743 (1993-07-01), Thompson et al.
patent: 5252807 (1993-10-01), Chizinsky
patent: 5256274 (1993-10-01), Poris
patent: 5256565 (1993-10-01), Bernhardt et al.
patent: 5259407 (1993-11-01), Tuchida et al.
patent: 5277985 (1994-01-01), Li
patent: 5290361 (1994-03-01), Hayashida et al.
patent: 5292393 (1994-03-01), Maydan et al.
patent: 5314756 (1994-05-01), Tagaya
patent: 5316974 (1994-05-01), Crank
patent: 5328589 (1994-07-01), Martin
patent: 5349978 (1994-09-01), Sago et al.
patent: 5368711 (1994-11-01), Poris
patent: 5377708 (1995-01-01), Bergman et al.
patent: 5397741 (1995-03-01), O'Connor
patent: 5429733 (1995-07-01), Ishida
patent: 5431803 (1995-07-01), DiFranco et al.
patent: 5436504 (1995-07-01), Chakravorty et al.
patent: 5441618 (1995-08-01), Matsuda
patent: 5447599 (1995-09-01), Li
patent: 5600532 (1997-02-01), Michiya et al.
patent: 5605615 (1997-02-01), Goolsby et al.
patent: 5608943 (1997-03-01), Konishi et al.
patent: 5612254 (1997-03-01), Mu et al.
patent: 5625170 (1997-04-01), Poris
patent: 5627102 (1997-05-01), Shinriki et al.
patent: 5651823 (1997-07-01), Parodi
patent: 5651865 (1997-07-01), Sellers
patent: 5674787 (1997-10-01), Zhao
patent: 5677244 (1997-10-01), Venkatraman
patent: 5685970 (1997-11-01), Ameen et al.
patent: 5693563 (1997-12-01), Teong
patent: 5705223 (1998-01-01), Bunkofske
patent: 5707466 (1998-01-01), Atwater
patent: 5718813 (1998-02-01), Drummond et al.
patent: 5723028 (1998-03-01), Poris
patent: 5747355 (1998-05-01), Konuma
patent: 5763953 (1998-06-01), IIjima
patent: 5779799 (1998-07-01), Davis
patent: 5801444 (1998-09-01), Aboelfotoh
patent: 5814557 (1998-09-01), Venkatraman
patent: 5863666 (1999-01-01), Merchant et al.
patent: 5873992 (1999-02-01), Glezen
patent: 5893752 (1999-04-01), Zhang et al.
patent: 5937142 (1999-08-01), Moslehi
patent: 5939788 (1999-08-01), McTeer
patent: 5969422 (1999-10-01), Ting et al.
patent: 5972192 (1999-10-01), Dubin et al.
patent: 5989623 (1999-11-01), Chen et al.
patent: 6001730 (1999-12-01), Farkas et al.
patent: 6015749 (2000-01-01), Liu
patent: 6037257 (2000-03-01), Chiang
patent: 6043153 (2000-03-01), Nogami et al.
patent: 6066892 (2000-05-01), Ding et al.
patent: 6072163 (2000-06-01), Armstrong et al.
patent: 6074544 (2000-06-01), Reid et al.
patent: 6099712 (2000-08-01), Ritzdorf
patent: 6100195 (2000-08-01), Chan
patent: 6121141 (2000-09-01), Mei-Chu Woo
patent: 6123825 (2000-09-01), Uzoh
patent: 6126761 (2000-10-01), DeHaven et al.
patent: 6126989 (2000-10-01), Robinson
patent: 6136163 (2000-10-01), Cheung
patent: 6139697 (2000-10-01), Chen
patent: 6184121 (2001-02-01), Buchwalter
patent: 6184137 (2001-02-01), Ding
patent: 6228768 (2001-05-01), Woo et al.
patent: 6249055 (2001-06-01), Dubin
patent: 6254758 (2001-07-01), Koyama
patent: 6278089 (2001-08-01), Young et al.
patent: 6280183 (2001-08-01), Mayur et al.
patent: 6297154 (2001-10-01), Gross et al.
patent: 7115196 (2006-10-01), Chen et al.
patent: 2003/0162392 (2003-08-01), Wang et al.
patent: 0 751 567 (1997-01-01), None
patent: 0 881 672 (1998-12-01), None
patent: 0 881 673 (1998-12-01), None
patent: 0 982 771 (2000-03-01), None
patent: 2623524 (1989-05-01), None
patent: 58182823 (1983-10-01), None
patent: 63118093 (1988-05-01), None
patent: 04131395 (1992-05-01), None
patent: 04280993 (1992-10-01), None
patent: 6017291 (1994-01-01), None
patent: 7050299 (1995-02-01), None
patent: WO-97/12079 (1997-04-01), None
patent: WO-98/02912 (1998-01-01), None
patent: WO-9802912 (1998-01-01), None
patent: WO 98/27585 (1998-06-01), None
F. A. Lowenheim, Electroplating, McGraw-Hill Book Co., New York, 1978, pp. 12-13, 416-423.
Richard Alkire, “Transient Behavior during Electrodeposition onto a Metal Strip of High Ohmic Resistance,” J. Electrochem. Soc., vol. 118, No. 12, Dec. 1971, pp. 1935-1941.
Tomov, I.V. et al. “Recovery and recrystallization of electrodeposited bright copper coatings at room temperature. II. X-ray investigation of primary recrystallization,” Journal of Applied Electrochemistry, 1985, pp. 887-894, vol. 15, Chapman and Hall Ltd.
Wolf, Stanley, “Low-kDielectrics,” Silicon Processing for the VLSI Era, vol. 4: Deep Submicron Process Technology, 2002, pp. 639-670, vol. 4, Lattice Press, Sunset Beach.
Ahn, E. C. et al. “Adhesion Reliability of Cu-Cr Alloy Films to Polyimide”Materials Research Society Symposium Proceedings, 1996, vol. 427, pp. 141-145, Materials Research Society.
Alers, G. B. et al. “Trade-off between reliability and post-CMP defects during recrystallization anneal for copper damascene interconnects”IEEE International Reliability Physics Symposium, 2001, pp. 350-354.
Gladkikh, A. et al. “Activation Energy of Electromigration in Copper Thin Film Conductor Lines”Materials Research Society Symposium Proceedings, 1996, vol. 427, pp. 121-126, Materials Research Society.
Kononenko, O. V. et al. “Electromigration In Submicron Wide Copper Lines”Materials Research Society Symposium Proceedings, 1996, vol. 427, pp. 127-132, Materials Research Society.
Mei, Y. et al. “Thermal Stability and Interaction Between SIOF and Cu Film”Materials Research Society Symposium Proceedings, 1996, vol. 427, pp. 433-439, Materials Research Society.
Russell, S. W. et al. “The Effect of Copper on the Titanium-Silicon Dioxide Reaction and the Implications for Self-Encapsulating, Self-Adhering Metallization Lines”,Materials Research Society Symposium Proceedings, 1992, vol. 260, pp. 763-768, Materials Research Society, Pittsburgh, PA.
Nguyen et al, “Inter connect and Con

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for low temperature annealing of metallization... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for low temperature annealing of metallization..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for low temperature annealing of metallization... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4044199

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.