Fishing – trapping – and vermin destroying
Patent
1994-06-10
1995-08-22
Quach, T. N.
Fishing, trapping, and vermin destroying
437 24, 437 41, 437933, 148DIG19, 148DIG144, H01L 21265, H01L 2128
Patent
active
054440246
ABSTRACT:
A method is provided for controlling growth of silicide to a defined thickness based upon the relative position of peak concentration density depth within a layer of titanium. The titanium layer is deposited over silicon and namely over the silicon junction regions. Thereafter the titanium is implanted with argon ions. The argon ions are implanted at a peak concentration density level corresponding to a depth relative to the upper surface of the titanium. The peak concentration density depth can vary depending upon the dosage and implant energies of the ion implanter. Preferably, the peak concentration density depth is at a midpoint between the upper and lower surfaces of the titanium or at an elevational level beneath the midpoint and above the lower surface of the titanium. Subsequent anneal of the argon-implanted titanium causes the argon atoms to occupy a diffusion area normally taken by silicon consumed and growing within overlying titanium. However, based upon the presence of argon, the diffusion length and therefore the silicide thickness is reduced to a controllable amount necessary for applications with ultra-shallow junction depths.
REFERENCES:
patent: 4551908 (1985-11-01), Nagasawa et al.
patent: 4558507 (1985-12-01), Okabayashi et al.
patent: 4683645 (1987-08-01), Naguib et al.
patent: 4830971 (1989-05-01), Shibata
patent: 5108954 (1992-04-01), Sandhu et al.
patent: 5217924 (1993-06-01), Rodder et al.
patent: 5268317 (1993-12-01), Schwalke et al.
Wang, K., et al., "Induced Interface Interactions in Ti/Si Systems by Ion Implantation", J. Vac. Sci. Technol., 16(2), Mar./Apr. 1979, pp. 130-133.
Ku, Y., et al., "Effects of Ion-Beam Mixing . . . With Self-Aligned Silicide Structure", IEEE Electron Device Letters, vol. 9, No. 6, Jun. 1988, pp. 293-295.
Ly, C. Y., et al., "Process Limitation and Device Design Tradeoffs . . . " IEEE Transactions on Electron Devices, vol. 38, No. 2, Feb. 1991, pp. 246-254.
Yoshida, T., et al., "Self-Aligned Titanium Silicided Junctions . . . ", J. Electrochem. Soc., vol. 135, No. 2, Feb. 1988, pp. 481-486.
Anjum Mohammed
Burki Ibrahim K.
Christian Craig W.
Advanced Micro Devices , Inc.
Quach T. N.
LandOfFree
Method for low energy implantation of argon to control titanium does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for low energy implantation of argon to control titanium , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for low energy implantation of argon to control titanium will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2141722