Method for liquid phase epitaxial growth

Details Method for liquid phase epitaxial growth Method for liquid phase epitaxial growth

1987-08-07

1989-01-17

Ozaki, George T.

Fishing, trapping, and vermin destroying

118415, 437120, 437130, 437133, H01L 21208

Patent

active

047988126

ABSTRACT:
A method of fabricating a solid state device having chemically bound arsenic and phosphorous includes carrying out liquid phase epitaxial growth in the presence of partial pressures of arsenic and phosphorus.

REFERENCES:
patent: 3565702 (1971-02-01), Nelson
patent: 3933538 (1976-01-01), Akai et al.
patent: 4661175 (1987-04-01), Kuphal et al.
H. Nagai et al, "Thermal Deformation of Surface Corrugations on InGaAsP Crystals", Journal of Crystal Growth, vol. 71, pp. 225-231, 1985.
Yu. P. Khukhryanskii et al., "Pressure of the Vapor Phase Above Solutions of InP and InAsihTin", Izv. Akad. Nauk SSSR, Neorg-Mater, vol. 13, No. 5, May 1977, pp. 785-788.
Logan et al., J. of Crystal Growth, vol. 76, Jul. 1986, pp. 17-30, North Holland, Amsterdam.

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