Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-03-20
2007-03-20
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C257SE21024, C257SE21577
Reexamination Certificate
active
10952188
ABSTRACT:
The present invention provides a method for etching a substrate100. The method includes conducting a first etch on an anti-reflective layer170and a portion of a hardmask layer140, 150to form an opening162in the substrate100. The first etch is designed to be selective to a remaining portion of the hardmask layer140, 150. A second etch, which is different from the first etch, is conducted on a remaining portion of the hardmask140, 150, and it is designed to be less selective than the first etch to the remaining portion of the hardmask140, 150. The first etch allows polymer to build up on the sidewalls of the opening162, and the polymer substantially remains on the sidewalls during the second etch.
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Brady III W. James
Everhart Caridad
McLarty Peter K.
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