Method for light-induced photolytic deposition simultaneously in

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148DIG71, 20415715, 427 531, 427 541, 427 55, 427 561, 437 88, 437108, 437160, 437173, 437929, 437942, 437963, H01L 21205, H01L 21225

Type

Patent

Status

active

Patent number

047849630

Description

ABSTRACT:
Semiconductor components which have a plurality of layers lying on top of one another are manufactured with the assistance of a method for light-induced, photolytic deposition. Particularly, periodically alternating layers (hyperfine structure elements) and/or doping patterns are produced simultaneously with deposition of layers and/or with randomly selected doping gradients. In particular, the method is also suited for simultaneous deposition of layers lying laterally side-by-side or of laterally side-by-side differing dopings of a layer being deposited. In the context of doping, the radiation damage known from implantation is avoided.

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