Method for laser trimming of bi-FET circuits

Details Method for laser trimming of bi-FET circuits Method for laser trimming of bi-FET circuits

1977-09-06

1979-10-30

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 219121L, 357 23, 357 91, 427 53, H01L 21265, B23K 900

Patent

active

041727410

ABSTRACT:
Radiant energy, preferably that of a laser, is focused onto the surface of a silicon integrated circuit that contains a thin layer doped to the opposite conductivity type of the underlying silicon. The thin layer can be trimmed so as to tailor its conductivity. Such layers when used in JFET, diode, bipolar transistor, or resistor structures can therefore be precision trimmed. In particular, JFET pairs can be trimmed to a very close match.

REFERENCES:
patent: 3597579 (1971-08-01), Lumley
patent: 3801366 (1974-04-01), Lemelson
patent: 3940289 (1976-02-01), Marquardt et al.
patent: 3992819 (1976-11-01), Schmall
patent: 4059461 (1977-11-01), Fan et al.
Industrial Lasers & Their Applications, J. E. Harry, McGraw Hill, 1974, N.Y., pp. 136-138.
Uglov, "Lasers in Metallurgy . . . ," Sov. J. Quent. Electron., 4 (1974) 564.
Hutchins, "Localized . . . Diffusions . . . Laser Melting . . .," IBM-TDB, 16 (1974) 2585.
Braun et al., "Laser Adjustable Resistors . . .," Solid State Tech. 12 (1969) 56.
Ban et al., "Thin Films . . . Dielectrics . . . by Laser . . .," J. Mat. Sc. 5 (1970) 974.

Affiliated with

Also associated with

Rating

Method for laser trimming of bi-FET circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for laser trimming of bi-FET circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for laser trimming of bi-FET circuits will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-18871