Method for lapping semiconductor material

Details Method for lapping semiconductor material Method for lapping semiconductor material

1977-01-26

1978-07-04

Smith, Gary L.

Abrasive tool making process, material, or composition

With carbohydrate or reaction product thereof

51216LP, 51277, 51281SF, 51283R, B24B 100, B24B 4106

Patent

active

040980316

ABSTRACT:
It has been discovered that plastic deformation of a wafer of light-emitting semiconductor material during processing creates areas of poor radiative efficiency known as large dark spot (LDS) defects. An improved technique for lapping is described which alleviates stress and substantially reduces the initiation and propagation of such defects. Conventionally, wafers are affixed to a mounting plate by coating the plate with wax or some other appropriate adhesive and then applying pressure. The improvement comprises interposing a spacer between the mounting plate and the wafer. The spacer is capable of accommodating surface irregularities and particulates while maintaining substrate planarity.

REFERENCES:
patent: 3041800 (1962-07-01), Heisel
patent: 3475867 (1969-11-01), Walsh
patent: 3841031 (1974-10-01), Walsh
patent: 3874129 (1975-04-01), Deckert
Applied Physics Letter, vol. 23, p. 147, Aug. 1973, (Hartman).
Applied Physics Letter, vol. 24, p. 494, May 1974, (Johnston).
Applied Physics Letter, vol. 28, p. 140, Feb. 1966, (Logan).
Journal of Applied Physics, vol. 45, p. 3899, Sep. 1974, (Petroff).

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