Method for isolating SiO.sub.2 layers from PZT, PLZT, and platin

Details Method for isolating SiO.sub.2 layers from PZT, PLZT, and platin Method for isolating SiO.sub.2 layers from PZT, PLZT, and platin

1992-03-03

1993-05-18

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, 361321, 365145, H01G 410, H01G 700, G11C 1122

Patent

active

052126200

ABSTRACT:
An improved method for constructing integrated circuit structures in which a buffer SiO.sub.2 layer is used to separate various components comprising ferroelectric materials or platinum is disclosed. The invention prevents interactions between the SiO.sub.2 buffer layer and the ferroelectric materials. The invention also prevents the cracking in the SiO.sub.2 which is commonly observed when the SiO.sub.2 layer is deposited directly over a platinum region on the surface of the circuit. The present invention utilizes a buffer layer of material which is substantially inert with respect to the ferroelectric material and which is also an electrical insulator to separate the SiO.sub.2 layer from the ferroelectric material and/or the platinum regions.

REFERENCES:
patent: 5003428 (1991-03-01), Shepherd
patent: 5005102 (1991-04-01), Larson
patent: 5046043 (1991-09-01), Miller et al.
patent: 5070026 (1991-12-01), Greenwald et al.

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