Method for isolating semiconductor elements

Fishing – trapping – and vermin destroying

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437 70, 437242, H01L 2176

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active

055739741

ABSTRACT:
A method for isolating semiconductor elements, A oxynitride has an intermediate property between an oxide and a nitride, and therefore, it has an excellent selection ratio when etching the oxide and the nitride (particularly during a wet etching. The method for isolating semiconductor elements includes the steps of: (1) forming a pad oxide layer on a silicon substrate, and depositing silicon nitride; (2) carrying out a photo etching process to remove the silicon nitride layer of a field region as a region other than an active region; (3) carrying out a field oxidation process to form a field oxide layer on the field region; (4) carrying out a heat treatment under an NH.sub.3 atmosphere to form an oxynitride layer on the field oxide layer; and (5) removing the nitride layer, growing a sacrificial oxide layer, and removing the sacrificial oxide layer by applying a wet etching method.

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patent: 5019526 (1991-05-01), Yamane et al.

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