Method for isolating semiconductor devices with use of...

Details Method for isolating semiconductor devices with use of... Method for isolating semiconductor devices with use of...

2007-01-23

2007-01-23

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

C438S424000, C438S405000, C438S435000, C438S637000, C438S770000, C438S769000, C438S787000, C438S790000, C257SE21548

Reexamination Certificate

active

10866618

ABSTRACT:
The present invention relates to a method for isolating semiconductor devices. The method includes the steps of: forming a patterned pad nitride layer pattern to open at least one isolation region on the substrate; forming a first trench and a second trench by etching the exposed substrate; depositing a first oxide layer to fill the first trench by performing an atomic layer deposition (ALD) method; etching a portion of the first oxide layer which is filled into the wide trench; and depositing a second oxide layer by performing a deposition method.

REFERENCES:
patent: 6734082 (2004-05-01), Zheng et al.
patent: 2001/0006839 (2001-07-01), Yeo
patent: 2003/0030121 (2003-02-01), Heo et al.
patent: 2003/0190800 (2003-10-01), Lee et al.
patent: 1020010058498 (2001-07-01), None
patent: 1020030013761 (2003-02-01), None

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