Method for isolating semiconductor devices

Details Method for isolating semiconductor devices Method for isolating semiconductor devices

2007-03-13

2007-03-13

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S434000, C438S440000

Reexamination Certificate

active

11024632

ABSTRACT:
A method of isolating semiconductor devices including forming a pad layer on a semiconductor substrate, forming a trench by etching the semiconductor substrate to a predetermined depth using the pad layer as an etch barrier, implanting ion impurities into a bottom of the trench so as to increase an oxidation rate thereat, performing heat treatment for activating ion implanted impurities, growing a liner oxide film on a bottom and a sidewall of the trench, forming an isolation film on the liner oxide film so as to fill the trench, and smoothing the isolation film.

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patent: 2004/0152324 (2004-08-01), Bentum et al.
patent: 2005/0118784 (2005-06-01), Kim

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