Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-09-04
2000-05-09
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438710, 438719, H01L 2130
Patent
active
060603992
ABSTRACT:
A semiconductor device isolation method includes sequentially forming a first insulating film and a second insulating film on a semiconductor substrate, exposing a predetermined portion of the surface of the semiconductor substrate, forming a third insulating on the exposed surface of the semiconductor substrate and the second insulating film, forming sidewall spacers composed of the third insulating film at the sidewall surfaces of the first and second insulating films, forming a trench by performing an etching by a predetermined depth using the sidewall spacers as a mask, removing the sidewall spacers, filling a high density plasma chemical vapor deposition (HDP CVD) oxide in the trench, and removing the first and second insulating films.
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A. Chatterjee et al., "A Shallow Trench Isolation Study for 0.25/0.18.mu.m CMOS Technologies and Beyond", 1996 Symposium on VLSI Technology Digest of Technical Papers, pp. 158-157.
Kim Young-Gwan
Lee Joon-Sung
Chen Kin-Chan
LG Semicon Co. Ltd.
Utech Benjamin L.
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