Fishing – trapping – and vermin destroying
Patent
1993-07-12
1994-12-20
Hearn, Brian D.
Fishing, trapping, and vermin destroying
437 70, 437 72, 437 73, H01L 2176
Patent
active
053745841
ABSTRACT:
A method for isolating elements in a silicon semiconductor device is disclosed. The invention discloses the steps of: (1) forming a thermal silicon oxide layer on a silicon substrate, depositing a layer of polysilicon, and depositing a first silicon nitride layer thereon, (2) patterning an active region and a field region, and etching the thermal oxidation layer, the polysilicon layer and the first silicon nitride layer on the field region to forth an active region pattern, (3) depositing a second silicon nitride layer, and, thereupon, depositing a silicon oxide layer, (4) etching back the oxide layer by application of a reactive ion etch technique, forming a silicon oxide side wall on the side of the active region pattern, and etching back the second silicon nitride layer using the oxide side wall as a mask to expose the silicon substrate, (5) removing the oxide side wall, and performing a channel stop field ion implantation, and (6) performing a field oxidation process to form a field oxide layer.
REFERENCES:
patent: 4508757 (1985-04-01), Fabricius et al.
patent: 4637128 (1987-01-01), Mizutani
patent: 4800417 (1989-01-01), Kato
patent: 4833098 (1989-05-01), Kato
patent: 5149669 (1992-09-01), Hosaka
Lee Chang-Jae
Yang Hee-Sik
Dang Trung Quoc
Goldstar Electron Co. Ltd.
Hearn Brian D.
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