Method for isolating a semiconductor element

Details Method for isolating a semiconductor element Method for isolating a semiconductor element

1989-03-10

1989-12-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437981, 437978, 437 61, 437238, 156653, H01L 2108

Patent

active

048852619

ABSTRACT:
According to the invention, on a silicon substrate is formed an insulation silicon oxide film with the etching rate thereof increasing as one goes away from the substrate, on the insulation silicon oxide film is formed a first silicon nitride film defining the width of the element isolation region, the insulation silicon oxide film is provided with a slope by isotropic etching with the first silicon nitride film as mask, and a lower portion of the insulation silicon oxide film is isotropically etched, with the sloped portion of the insulation silicon oxide film being masked by a second silicon nitride film.

REFERENCES:
patent: 4354896 (1982-10-01), Hunter
patent: 4667395 (1987-05-01), Ahlgren et al.
White, L. K., "Bilayer Taper Etching" J. Electrochem Soc., vol. 127, No. 12, 1980, pp. 2687-93.

Affiliated with

Also associated with

Rating

Method for isolating a semiconductor element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for isolating a semiconductor element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for isolating a semiconductor element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2034280