Method for introducing sweep gases into a glow discharge deposit

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427 85, 427 74, 4272555, 4272551, 118723, 118 501, 118718, 118719, 118733, H01L 21365

Patent

active

045377952

ABSTRACT:
A method for introducing sweep gas through a baffle system adapted for use with glow discharge deposition apparatus in which successive amorphous semiconductor layers are deposited on a substrate. The deposition apparatus includes at least a pair of adjacent dedicated deposition chambers into each of which different process gases are introduced, the chambers being operatively connected by a gas gate. Inert gases are swept through the gas gate to minimize back diffusion of process gases from the chambers. The baffle system is adapted to prevent said sweep gases from entering into turbulent flow when traveling through the gas gate passageway. Further, a sufficient volume per unit time of sweep gas is introduced to insure that some sweep gas flows into the cathode region of the first chamber, thereby substantially preventing process gases and plasma from escaping from the cathode region and forming silane powder.

REFERENCES:
patent: 4048955 (1977-09-01), Anderson
patent: 4438724 (1984-03-01), Doehler et al.
patent: 4462332 (1984-07-01), Nath et al.
patent: 4492181 (1985-01-01), Orshinsky et al.

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