Method for intrinsically doped III-A and V-A compounds

Fishing – trapping – and vermin destroying

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437107, 437133, 437174, 117 84, 117 94, 117104, H01L 21203

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055255388

ABSTRACT:
An amorphous compound is changed to single crystal structure by heating at an elevated temperature in an inert atmosphere or in an atmosphere of a forming gas, the amorphous compound is composed of at least one Group III-A element of the Periodic Table and at least one Group V-A element, the amorphous compound having an excess over stoichiometric amount of at least one Group V-A element. The single crystal phase compound, intrinsically doped with at least one element from Group V-A, has the properties of high conductivity for a semiconductor without using any extrinsic dopant and a non-alloyed ohmic contact with a metal.

REFERENCES:
patent: 5281543 (1994-01-01), Fukuzawa et al.
patent: 5306662 (1994-04-01), Nakamura et al.
Mahalingam et al. "J. Vac. Sci. & Tech. B 9(4), Jul./Aug. 1991, pp. 2328-2".

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