Method for intrinsic-gettering silicon wafer

Details Method for intrinsic-gettering silicon wafer Method for intrinsic-gettering silicon wafer

1995-07-14

1997-10-07

Niebling, John

Fishing, trapping, and vermin destroying

H01L 21322

Patent

active

056747560

ABSTRACT:
To provide a silicon-wafer intrinsic-gettering method making it possible to obtain a desired intrinsic-gettering effect through a heat treatment of 1,000.degree. C. or lower and optionally change the thickness of a DZ layer. To obtain a silicon wafer with large intrinsic-gettering effectiveness, a silicon wafer containing oxygen precipitate nuclei is quickly heated from room temperature up to 800.degree. to 1,000.degree. C. and holding the state for 0.5 to 20 min is used. In addition to the above heat treatment step, it is preferable to further use the step of naturally cooling the silicon wafer up to room temperature and the step of heating the naturally-cooled silicon wafer from 500.degree. to 700.degree. C. up to 800.degree. to 1,100.degree. C. at a rate of 2.degree. to 10.degree. C./min and holding the silicon wafer at the temperature for 2 to 48 hr.

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