Method for internal gettering of oxygen in III-V compound semico

Details Method for internal gettering of oxygen in III-V compound semico Method for internal gettering of oxygen in III-V compound semico

1991-02-14

1993-02-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437934, 437987, 148DIG24, H01L 21306

Patent

active

051837676

ABSTRACT:
A method and article of manufacture are disclosed comprising substantially increasing the electrical activation and mobility of electrons in a III-V semiconductor material containing minor amounts of oxygen by doping a III-V crystalline material with an n-type dopant and adding or implanting an oxygen reactive element in the III-V material where the doses of dopant and implanted oxygen reactive element are low enough to effect this increase. These doses typically do not exceed about 1E13 cm.sup.-2 and 4.5E12 cm.sup.-2 respecitvely. The added or implanted oxygen reactive element preferably is at a dose less than the n-type dopant. Experimental data indicate that the added or implanted oxygen reactive element acts as a gettering agent to form an oxygen depleted zone between dopant and oxygen reactive element regions.

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Farley et al., "Co-Implantation and Autocompensation in close contact Rapid Thermal Annealing of Si-Implanted GaAs:Cr," Jnl. of Electronic Materials, vol. 16, No. 1, 1987, pp. 79-85.

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