Method for integration of three bipolar transistors in a...

Details Method for integration of three bipolar transistors in a... Method for integration of three bipolar transistors in a...

2005-07-29

2008-07-08

Lewis, Monica (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S197000

Reexamination Certificate

active

07397109

ABSTRACT:
A method for integrating three bipolar transistors into a semiconductor body, multilayer component, and semiconductor arrangement is provided. A tendency toward thyristor-like behavior of the multilayer semiconductor arrangements with the three bipolar transistors is suppressed with the aid of a heterojunction. The high frequency characteristics and the blocking capability of the circuit of the three bipolar transistors is made more flexible, while the capability of an input signal to control an output signal is maintained.

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Barrie Gilbert,“A Precise Four-Quadrant Multiplier With Subnanosecond Response,”IEEE Journal of Solid-State Circuits, vol. SC-3, No. 4, Dec. 1968, pp. 365-373; ISSN: 0018-9200.

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