Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2007-09-05
2010-11-02
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S073000, C438S403000, C438S462000, C438S797000, C438S975000, C430S005000, C430S302000, C430S369000, C257S422000, C257S423000, C257S428000, C257SE21035, C257SE21038, C257SE23179, C257SE27005
Reexamination Certificate
active
07825000
ABSTRACT:
A magnetic memory device including a Magnetic Tunnel Junction (MTJ) device comprises a substrate and Front End of Line (FEOL) circuitry. A Via level (VA) InterLayer Dielectric (ILD) layer, a bottom conductor layer, and an MTJ device formed over the top surface of the VA ILD layer are formed over a portion of the substrate. An alignment region including alignment marks extends through the bottom conductor layer and extends down into the device below the top surface of the VA ILD layers is juxtaposed with the MJT device.
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Assefa Solomon
Kanakasabapathy Sivananda K.
International Business Machines - Corporation
Jones II Graham S.
Nguyen Dao H
Percello Louis J.
Trepp Robert M.
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